Heavy ion radiation model added to v.2013 device simulators (Oct. 4th 2013)
A new model has been added to APSYS and our other device simulators to model the effects of
a heavy ion hit on device performance. This allows the software to import Linear Energy Transfer
(LET) data from third-party software tools such as SRIM/TRIM.
Version 2013 device simulators released (Sep. 24th 2013)
Version 2013 release represents a high level of maturity for
Crosslight’s device simulation packages of APSYS, PICS3D and LASTIP.
The following is a brief summary of recent upgrade and enhancements:
- New system allows the use of user-defined material labels in addition to material numbers
in most commands. This offers more flexibility and convenience in situations
where the material the number of materials changes. - Crosslight FDTD greatly sped up using GPU technology.
- Convenient mesh elimination in LayerBuilder GUI.
- Improved output data format and significant speed-up of CrosslightView for large 3D mesh
- Improved computation speed due to improved mesh and use of GPU.
- New model to account for side mode/main mode competition (PICS3D)
- Improved data output capabilities including various forms of optical gain/loss,
optical cavity propagation constants, linewidth and noise. - Automatic setting of metal work function to enforce condition of Ohmic contact.
- Flexibility in carrier generation/injection modeling so that flash memory R/W
process can be simulated with ease. - Doping profiles in 3D simulations can now straddle multiple mesh planes with a single declaration.
- Manybody gain model defaults improved with stronger bandgap renormalization
effect, consistent with experimental measurements. - Implementation of non-equilibrium Green’s function (NEGF) method.
- Mixed-mode simulation with circuit format compatible with various popular versions of SPICE.
- Raytracing program improved to allow better output of spectrum data (APSYS).
Crosslight Short Course in Ottawa (Sep. 9th 2013)
Crosslight is pleased to announce a 3-day seminar on photonic device and HEMT simulation Oct. 17-19 in Ottawa/Gatineau. This event is organized by CMC Microsystems so registration information and further details can be found here.
Crosslight Software Tutorial at NUSOD 2013 (May 28th 2013)
Crosslight is pleased to offer a free half-day short course on optoelectronic device simulation on Friday August 23rd at the NUSOD conference in Vancouver. Details are available from this
link.
Pre-registration is encouraged and participants should bring a Windows laptop to run a demo version of the software during the hands-on part of he tutorial.
Breakthrough in FDTD simulation technology (May 28th 2013)
Crosslight is pround to announce a breakthrough in FDTD simulation technology with high efficiency GPU acceleration. A state-of-the-art acceleration factor of 66x using inexpensive GPU cards has been achieved.
The new module is now available in applicable Crosslight TCAD tools including OptoWizard, APSYS and PICS3D. Interested users are encouraged to obtain a free demo from Crosslight. For more details, please check this
link.
New Hybrid NEGF method (Feb. 27th, 2013)
Crosslight is pleased to announce the successful implementation of a new method of device simulation, the non-equilibrium Green’s function (NEGF) method. The NEGF method is regarded as the most advanced method for modeling carrier transport in devices at a nanometer scale. Due to its computational complexity, we have adopted a hybrid approach to divide a device into a quantum ballistic regime (QBT) and several classical drift-diffusion (DD) regime(s). The computationally intensive NEGF method is only used in the QBT regime and it has been seamlessly integrated with the APSYS device simulation software from Crosslight. Users of Crosslight will find running NEGF simulation to be no different than running a typical TCAD simulation except for a slight slow down due to the extra numerical cost of the NEGF calculations.
The new model is now available in APSYS version 2013beta and further details can be found in a new presentation which demonstrates the use of the NEGF model by going through all the process and device simulation steps for a 3D FINFET. To make the simulation more accurate, quantum confinement is treated using a quantum wire density of state (DOS) theory.
Existing users of Crosslight TCAD tools and new potential users may contact us for a free evaluation trial. The application form may be found here.