New application note on SiC-JBS

A new application note on SiC Junction Barrier Schottky rectifiers has been submitted by our collaborator, Dr. Gary Dolny. Results demonstrate the quality of fit produced by a properly-calibrated APSYS model.

Upcoming Software Tutorial

Crosslight is pleased to announce a new and expanded version of our short course/product tutorial at the upcoming Photonics West conference in San Francisco; free registration is now open.

Crosslight staff will also be attending the conference; please stop by our booth (#2610, South Hall) to register in person or to discuss your modeling needs.

August 2016 version finalized

Crosslight is proud to announce that its 2016.8 version has been finalized and will soon be released to customers.

Summary of changes:

  • A new graphical user interface program called SimuCenterJS has been released. Based on Javascript, this greatly improved launching pad for simulations replaces the existing SimuPics3d, SimuApsys and SimuCSuprem programs and enhances Crosslight’s capabilities to support other OS platforms. It also includes a much better Design Of Experiment platform which allows parameter optimization across multiple simulators, adding new DOE nodes and collecting/plotting in a DOE tree.
  • The functionality of LASTIP for Fabry-Perot lasers has been merged into a new basic edition of PICS3D.
  • Minispice capability enhanced so that a MxN resistor network can be inserted into the semiconductor simulation using an array of electrodes.
  • Improvement of band alignment models.
  • Improvement of 8×8 k.p model, especially for typeII IR PD application.
  • Microcavity model suitable for microcavity laser diode; already demonstrated for VCSEL with surface-relief effects.
  • New feature to automate the set up of the intraband quantum tunneling model. The location of tunneling regions and tunneling directions can now be totally automated.
  • Implementation of a localized tunneling model (sometime referred to as unified Schottky tunneling model) using p-n carrier generation to mimic intraband tunneling.
  • NEGF based quantum mechanical transport has been enhanced to transport of holes (useful for PMOS).
  • Multicavity VCSEL model improved to better handle surface relief effects.
  • LED device model (RCLED, LED_control and LED_simple, racetracing) with improved photorecycling and photon absorption.
  • Thomson heat more accurately defined in self-heating thermal model.
  • AC analysis upgraded for better modeling of traps and metal/semiconductor interfaces.
  • Quantum-well trap assisted tunneling model implemented which likely to explain the thermal efficiency droop (temperature dependent) for LED.
  • LO phone scattering times computed for quantum cascade lasers and QWIP; these were previously empirical fitting parameters.
  • Added ability to model an individual quantum dot with direct electrical/optical pumping. Previously quantum dot states were imported into a larger-scale (wetting layer) APSYS/PICS3D model where the electrical injection was done.
  • Improved interface with CSUPREM so that any impurity implanted or deposited in CSUPREM can be treated as traps in APSYS/PICS3D.
  • Coupled mode model interfaced with BPM propagation to that BPM mode shape is expressed as sum of lateral modes. This is useful for tapered laser diodes such as hybrid silicon lasers.

Crosslight is proud to demonstrate the setup and simulation of a self-consistent individual quantum dot (QD) model for the semiconductor optoelectronic industry. This model has applications for LEDs, laser diodes, flat panel displays, solar cells and more …

With better control of the growth of the quantum dots, there has been an increasing demand for band structure engineering and strain/stress management of quantum dots. The new modeling capability from Crosslight aims to provide the necessary tools for the design of devices that harness the unique capabilities of QDs.

Interested users are encouraged to contact Crosslight for the new tools and a working template.

New laser microcavity model

Crosslight is pround to announce a technical breakthrough in the device modeling of semiconductor optoelectronic devices: 2/3D simulation of microcavity laser diodes. The new modeling abandons the traditional approach of separating solutions of longitudinal and lateral modes and solves the Maxwell wave equations in all directions rigorously for all eigen modes operating at different wavelengths.

The microcavity option of PICS3D finds applications in VCSEL, RCLED, QD-LD/QD-LED, and microdisk lasers, where optical modes couple in different directions. A demonstration of the model as applied to surface relief VCSELs may be found in this presentation.

New LDMOS Application Note

The first results from our collaboration with Gary Dolny may be found here

Collaboration with Dr. Gary Dolny

Crosslight Software is pleased to announce that we are entering into a partnership with Dr. Gary Dolny, who will act as an adviser on the development and applications of Crosslight’s state-of-the-art TCAD simulation tools with emphasis on power and analog devices.

Dr. Dolny holds a Ph.D. in Electrical Engineering from the University of Pittsburgh and has more than 35 years’ experience in the industry with companies including RCA Laboratories, Sarnoff Corporation (now SRI International), Harris Semiconductor, Intersil Corp and Fairchild Semiconductor, where he achieved the rank of Technical Fellow. He has published approximately 80 papers in peer-reviewed conferences and technical journals, received two conference best paper awards and has been awarded approximately 40 U.S. patents. He is a Senior Member of the IEEE, has served on the organizing committee of the International Devices Meeting (IEDM) and the International Symposium on Power Semiconductor Devices and ICs (ISPSD) and has served as Editor of both IEEE Transactions on Electron Devices and IEEE Electron Device Letters in the area of Solid State Power and High Voltage Devices.

For more details, please contact Crosslight or Dr. Dolny.