Publications 2012 – 2014

2014

• “Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues”,
  Marco Calciati, Michele Goano & others, AIP Advances, Vol. 4 No. 6 (2014), doi:10.1063/1.4882176
• “Methods for slow axis beam quality improvement of high power broad area diode lasers”,
  H. An, Y. Xiong, C.-L. J. Jiang, B. Schmidt, and G. Treusch, SPIE LASE, 2014, doi:10.1117/12.2040986
• “A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED”,
  Y. Bin, G. Zhi-You, X. Nan, Z. Pan-Jun, L. Jing, L. Fang-Zheng, et al., Chinese Physics B, Vol. 23, No. 4, 2014, doi:10.1088/1674-1056/23/4/048502
• “Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers”,
  J.-Y. Chang, Y.-A. Chang, T.-H. Wang, F.-M. Chen, B.-T. Liou, and Y.-K. Kuo, Optics letters, Vol. 39, No. 3, 2014, doi:10.1364/OL.39.000497
• “GaN-Based Light-Emitting-Diode With a p-InGaN Layer”,
  P. Chen, C.-H. Kuo, W.-C. Lai, Y. A. Chen, L. Chang, and S. Chang, Journal of Display Technology, Vol. 10, No. 3, 2014, doi:10.1109/JDT.2013.2293767
• “Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer”,
  L. Cheng and S. Wu, Quantum Electronics, IEEE Journal of, Vol. 50, No. 4, 2014, doi:10.1109/JQE.2014.2305451
• “Impact of Surface Recombination on the Performance of Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes”,
  A. T. Connie, H. P. T. Nguyen, Q. Wang, I. Shih, and Z. Mi, CLEO: Applications and Technology, 2014, doi:10.1364/CLEO_AT.2014.AF2P.6
• “Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes”,
  M. Djavid, H. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, Semiconductor Science and Technology, Vol. 29, No. 8, 2014, doi:10.1088/0268-1242/29/8/085009
• “A systematic study of silicon germanium interdiffusion for next generation semiconductor devices”, Y. Dong, PhD Thesis, University of British Columbia (Canada), 2014.
• “Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells”,
  K. Driscoll, M. F. Bennett, S. J. Polly, D. V. Forbes, and S. M. Hubbard, Applied Physics Letters, Vol. 104, No. 2, 2014, doi:10.1063/1.4862028
• “Improve power conversion efficiency of slab coupled optical waveguide lasers”,
  J. Fan, L. Zhu, M. Dogan, and J. Jacob, Optics Express, Vol. 22, No. 15, 2014, doi:10.1364/OE.22.017666
• “Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission ”,
  Z. Fang, Q. Li, X. Shen, H. Xiong, J. Cai, J. Kang, et al., Journal of Applied Physics, Vol. 115, No. 4, 2014, doi:10.1063/1.4863208
• “Integrated Power Devices and TCAD Simulation”,
  Y. Fu, Z. Li, W. T. Ng, and J. K. Sin, CRC Press, 2014, 1466583819
• “Triggering of guiding and antiguiding effects in GaN-based VCSELs”,
  E. Hashemi, J. Bengtsson, J. Gustavsson, M. Stattin, M. Glauser, G. Cosendey, et al., SPIE OPTO, 2014, doi:10.1117/12.2038152
• “Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes”,
  X. Ji, T. Wei, F. Yang, H. Lu, X. Wei, P. Ma, et al., Optics Express, Vol. 22, No. 103, 2014, doi:10.1364/OE.22.0A1001
• “Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells”,
  Y. Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, L. Liang, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi::10.1088/1674-1056/23/6/068801
• “Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers”,
  C. Jin-Xin, S. Hui-Qing, Z. Huan, Z. Pan-Jun, and G. Zhi-You, Chinese Physics B, Vol. 23, No. 5, 2014, doi:10.1088/1674-1056/23/5/058502
• “Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer”,
  Z. G. Ju, W. Liu, Z.-H. Zhang, S. T. Tan, Y. Ji, Z. Kyaw, et al., ACS Photonics, Vol. 1, No. 4, 2014, doi:10.1021/ph500001e
• “Simulation of a Single-Mode Tunnel-Junction-Based Long-Wavelength VCSEL”,
  Z. D. Kaftroudi, E. Rajaei, and A. Mazandarani, Journal of Russian Laser Research, Vol. 35, No. 2, 2014, doi:10.1007/s10946-014-9408-5
• “Y-function analysis of the low temperature behavior of ultra-thin film FD SOI MOSFETs”,
  A. Karsenty and A. Chelly, Active and Passive Electronic Components Vol. 2014, doi:10.1155/2014/697369
• “Efficiency enhancement in Cu 2 ZnSnS 4 solar cells with subwavelength grating nanostructures”,
  S.-Y. Kuo and M.-Y. Hsieh, Nanoscale 6, No.13, 2014, doi:10.1039/C4NR00566J
• “Device modeling of the performance of Cu (In, Ga) Se2 solar cells with V-shaped bandgap profiles”,
  S.-Y. Kuo, M.-Y. Hsieh, D.-H. Hsieh, H.-C. Kuo, and F.-I. Lai, International Journal of Photoenergy Vol. 2014, doi:10.1155/2014/186579
• “On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes”,
  Z. Kyaw, Z.-H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, X. L. Zhang, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364/OE.22.000809
• “Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes”,
  L. Le, D. Zhao, D. Jiang, P. Chen, Z. Liu, J. Yang, et al., Optics Express, Vol. 22, No. 10, 2014, doi:http://dx.doi.org/10.1364/OE.22.011392
• “Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier”,
  Y. Lei, Z. Liu, M. He, Z. Li, J. Kang, X. Yi, et al., Applied Physics A, Vol. 115, No. 4, 2014, doi:10.1007/s00339-014-8393-4
• “High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers”,
  Z.-Y. Li, C.-Y. Lee, D.-W. Lin, B.-C. Lin, K.-C. Shen, C.-H. Chiu, et al., Quantum Electronics, IEEE Journal of Vol. 50, No. 5, 2014, doi:10.1109/JQE.2014.2304460
• “A quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open-and short-circuit photoluminescence”,
  S.-H. Lim, Y.-H. Ko, and Y.-H. Cho, Applied Physics Letters, Vol. 104, No. 9, 2014, doi:10.1063/1.4867238
• “Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer”,
  B. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, et al., Laser Physics Letters, Vol. 11, No. 8, 2014, doi:10.1088/1612-2011/11/8/085002
• “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer”,
  B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364/OE.22.000463
• “Reduced droop effect in nitride light emitting diodes by taper-shaped electron blocking layer”,
  C. Liu, Z. Ren, X. Chen, B. Zhao, X. Wang, and S. Li, IEEE Photonics Technology Letters, Vol. 26, No. 13, 2014, doi:10.1109/LPT.2014.2325598
• “Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer”,
  T. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Applied Physics A, Vol. 114, No. 4, 2014, doi:10.1007/s00339-014-8284-8
• “Effect of stair-case electron blocking layer on the performance of blue InGaN based LEDs”,
  T. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Journal of Display Technology, Vol. 10, No. 2, 2014, doi:10.1109/JDT.2013.2289358
• “Modeling of HOT (111) HgCdTe MWIR detector for fast response operation”,
  P. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, and A. Rogalski, Optical and Quantum Electronics, Feb. 2014, doi:10.1007/s11082-013-9860-4
• “MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions”,
  P. Martyniuk, A. Koźniewski, A. Kębłowski, W. Gawron, and A. Rogalski, Opto-Electronics Review, Vol. 22, No. 2, 2014, doi:10.2478/s11772-014-0186-y
• “Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes”,
  Z. Mi, H. P. Nguyen, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, et al., SPIE OPTO, 2014, doi:10.1117/12.2041284
• “Effects of the p-AlInGaN/GaN superlattices’ structure on the performance of blue LEDs”,
  L. Na, Y. Xiaoyan, L. Meng, G. Enqing, F. Xiangxu, S. Zhao, et al., Journal of Semiconductors, Vol. 35, No. 2, 2014, doi:10.1088/1674-4926/35/2/024010
• “Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions”,
  J. Piprek, Applied Physics Letters, Vol. 104, No. 5, 2014, doi:10.1063/1.4864311
• “Blue light emitting diode exceeding 100% quantum efficiency”,
  J. Piprek, physica status solidi (RRL)-Rapid Research Letters, Vol. 8, No. 5, 2014, doi:10.1002/pssr.201409027
• “Delta-Doping Effects on Quantum-Dot Solar Cells”,
  S. J. Polly, D. V. Forbes, K. Driscoll, S. Hellstrom, and S. M. Hubbard, IEEE Journal of Photovoltaics, Vol. 4, No. 4, 2014, doi:10.1109/JPHOTOV.2014.2316677
• “Mid-Wavelength Infrared nBn for HOT Detectors”,
  A. Rogalski and P. Martyniuk, Journal of Electronic Materials, Vol. 43 No. 8, 2014, doi:10.1007/s11664-014-3161-y
• “Tandem structure for efficiency improvement in GaN based light-emitting diodes”,
  M.-C. Tsai, B. Leung, T.-C. Hsu, and Y.-K. Kuo, Journal of Lightwave Technology, Vol. 32, No. 9, 2014, doi:10.1109/JLT.2014.2313953
• “Ultrabroad stimulated emission from quantum well laser”,
  H. Wang, X. Zhou, H. Yu, J. Mi, J. Wang, J. Bian, et al., Applied Physics Letters, Vol. 104, No. 25, 2014, doi:10.1063/1.4885366
• “Improvement of carrier distribution by using thinner quantum well with different location”,
  S.-W. Wang, D.-W. Lin, C.-Y. Lee, C.-C. Lin, and H.-C. Kuo, SPIE OPTO, 2014, doi:10.1117/12.2038402
• “Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer”,
  T. Wang, J. Xu, and X. Wang, Chinese Science Bulletin, Vol. 59 No. 20, 2014, doi:10.1007/s11434-014-0235-4
• “Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer”,
  Z. Xiang-Jing, Z. Jun, L. Dan-Wei, Y. Han-Xiang, R. Zhi-Wei, T. Jin-Hui, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi:10.1088/1674-1056/23/6/068502
• “Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes”,
  L. Xiao-Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, W. Liang-Liang, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088/1674-1056/23/2/028503
• “Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer”,
  Y. Xiao-Peng, F. Guang-Han, D. Bin-Bin, X. Jian-Yong, X. Yao, Z. Tao, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088/1674-1056/23/2/028502
• “Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers”,
  J.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, G.-H. Fan, and T. Zhang, Applied Physics A, Vol. 114, No. 2, 2014, doi:10.1007/s00339-013-8069-5
• “Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier”,
  J.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, F. Zhao, B.-B. Ding, J.-J. Song, et al., Optics Communications, Vol. 312, No. 2014, doi:10.1016/j.optcom.2013.08.053
• “Study of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers”,
  Q.-r. Yan, Y. Zhang, and J.-z. Li, Optoelectronics Letters, Vol. 10, No. 2014, doi:10.1007/s11801-014-4062-2
• “Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers”,
  Y. Yang, J. Wang, J. Li, and Y. Zeng, Journal of Applied Physics, Vol. 115, No. 23, 2014, doi:10.1063/1.4879252
• “Enhancement of hole injection with Mg–Si-codoped barriers in InGaN-based light-emitting diodes”,
  Y. Yang and Y. Zeng, Optics Communications, Vol. 326, No. 2014, doi:10.1016/j.optcom.2014.03.064
• “Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers”,
  Y. Yang and Y. Zeng, physica status solidi (a), Vol. 211, No. 7, 2014, doi:10.1002/pssa.201431088
• “Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers”,
  Y.-J. Yang and Y.-P. Zeng, Applied Physics A, Vol. 211 No. 7 2014, doi:10.1007/s00339-014-8321-7
• “Modeling of LWIR nBn HgCdTe photodetector”,
  Z. Ye, Y. Chen, P. Zhang, C. Lin, X. Hu, R. Ding, et al., SPIE Defense+ Security, 2014, doi:10.1117/12.2053288
• “Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors”,
  Z. Ye, P. Zhang, Y. Li, Y. Chen, S. Zhou, C. Sun, et al., Optical and Quantum Electronics, March 2014, doi:10.1007/s11082-014-9904-4
• “Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer”,
  X. Yu, G. Fan, S. Zheng, B. Ding, and T. Zhang, Photonics Technology Letters, IEEE, Vol. 26, No. 11, 2014, doi:10.1109/LPT.2014.2316546
• “Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes”,
  D. Żak, J. Jureńczyk, and J. Kaniewski, Detection, Vol. 2, No. 2, 2014, doi:10.4236/detection.2014.22003
• “Efficiency-Droop Reduction in Blue InGaN Light-Emitting Diodes with Low Temperature p-type Insertion Layer”,
  J. Zhang, X.-J. Zhuo, D.-W. Li, Z.-W. Ren, H.-X. Yi, J.-H. Tong, et al., Superlattices and Microstructures, Vol. 73 Septermber 2014, doi:10.1016/j.spmi.2014.05.017
• “Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells”,
  M. Zhang, Y. Li, S. Chen, W. Tian, J. Xu, X. Li, et al., Superlattices and Microstructures, July 2014, doi:10.1016/j.spmi.2014.07.002
• “Design of HgCdTe heterojunction photodiodes on Si substrate”,
  P. Zhang, Z. Ye, Y. Chen, C. Lin, X. Hu, R. Ding, et al., SPIE Sensing Technology+ Applications, 2014, doi:10.1117/12.2050089
• “On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes”,
  S. Zhang, A. T. Connie, D. A. Laleyan, H. Pham Trung Nguyen, Q. Wang, J. Song, et al., Vol. 50 No. 6, 2014, doi:10.1109/JQE.2014.2317732
• “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer”,
  Z.-H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, et al., Applied Physics Letters, Vol. 104, No. 7, 2014, doi:10.1063/1.4866041
• “Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes”,
  S. Zhu, J. Wang, J. Yan, Y. Zhang, Y. Pei, Z. Si, et al., ECS Solid State Letters, Vol. 3, No. 3, 2014, doi:10.1149/2.007403ssl
• “Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells”,
  X.-J. Zhuo, J. Zhang, D.-W. Li, X.-F. Wang, W.-L. Wang, J.-S. Diao, et al., Optics Communications, Vol. 325, No. 2014, doi:10.1016/j.optcom.2014.04.018

2013

• “Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode”,
  M. Alias, A. Al-Omari, F. Maskuriy, F. Faiz, and S. Mitani, Quantum Electronics, Vol. 43, No. 11, 2013, doi:10.1070/QE2013v043n11ABEH015127
• “Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base”,
  R. Basu, B. Mukhopadhyay, and P. K. Basu, Optoelectronics, IET, Vol. 7, No. 3, 2013, doi:10.1049/iet-opt.2012.0039
• “Comment on” Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop”[Phys. Rev. Lett. 110, 177406 (2013)]”,
  F. Bertazzi, M. Goano, X. Zhou, M. Calciati, G. Ghione, M. Matsubara, et al., arXiv preprint arXiv:1305.2512, 2013
• “Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content”,
  Z. Bi-Jun, C. Xin, R. Zhi-Wei, T. Jin-Hui, W. Xing-Fu, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088/1674-1056/22/8/088401
• “Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer”,
  D. Bin-Bin, Z. Fang, S. Jing-Jing, X. Jian-Yong, Z. Shu-Wen, Z. Yun-Yan, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088/1674-1056/22/8/088503
• “Enhancing light output of GaN-based LEDs with graded-thickness barriers and wells”,
  B. Cao, R. Hu, Z. Gan, and S. Liu, IEEE Photonics Technology Letters, Vol. 25, No. 18, 2013, pp. 1762 – 1765, doi:10.1109/LPT.2013.2275166
• “Advantages of blue InGaN light-emitting diodes with composition‐graded barriers and electron‐blocking layer”,
  J. Y. Chang and Y. K. Kuo, physica status solidi (a), Vol. 210, No. 6, 2013, doi:10.1002/pssa.201228764
• “Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers”,
  J.-Y. Chang, Y.-A. Chang, F.-M. Chen, Y.-T. Kuo, and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 25, No. 1, 2013, doi:10.1109/LPT.2012.2227700
• “Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration”,
  J.-Y. Chang, F.-M. Chen, Y.-K. Kuo, Y.-H. Shih, J.-K. Sheu, W.-C. Lai, et al., Optics letters, Vol. 38, No. 16, 2013, doi:10.1364/OL.38.003158
• “Simulation of high-efficiency GaN/InGaN pin solar cell with suppressed polarization and barrier effects”,
  J.-Y. Chang, S.-H. Yen, Y.-A. Chang, and Y.-K. Kuo, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109/JQE.2012.2225601
• “Numerical simulation of GaN-based LEDs with chirped multiquantum barrier structure”,
  S. Chang, Y. Lin, C. Liu, T. Ko, S. Hon, and S. Li, Quantum Electronics, IEEE Journal of, Vol. 49, No. 4, 2013, doi:10.1109/JQE.2013.2250919
• “Efficiency enhancement in InGaN/GaN light-emitting diodes by decreasing the thickness of last barrier”,
  L.-W. Cheng, Y. Sheng, C.-S. Xia, and W.-D. Hu, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633118
• “Theory and design optimization of energy-efficient hydrophobic wafer-bonded III–V/Si hybrid semiconductor optical amplifiers”,
  S. Cheung, Y. Kawakita, K. Shang, and S. Yoo, Journal of Lightwave Technology, Vol. 31, No. 24, 2013, doi:10.1109/JLT.2013.2284287
• “Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure”,
  L. Ding, L. Fan, Y. Li, and F. Guo, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-013-9663-7
• “Simulation on a Charge Sensitive Infrared Phototransistor for 45μm Wavelength”,
  L. Ding, Y. Li, and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633105
• “Weak light characteristics of potential biosensor unit”,
  L. Ding, Y.-Q. Li, X.-Y. Liu, J.-H. Shen, S. H. Zhang, and F.-M. Guo, Micro & Nano Letters, IET, Vol. 8, No. 10, 2013, doi:10.1049/mnl.2013.0292
• “Weak light characteristics of a new photoelectric sensor with potential biosensor application”,
  L. Ding, M. Wang, Y. Li, X. Liu, J. Shen, and F. Guo, Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, doi:10.1109/NEMS.2013.6559947
• “Physical modeling and simulation of a high-performance charge sensitive infrared phototransistor”,
  L. Ding, P. Xu, Y. Li, and F. Guo, Optical and Quantum Electronics, Oct. 2013, doi:10.1007/s11082-013-9808-8
• “Study of the effect of in composition variation in the active region and barrier layers on the structure performance of 462 nm InGaN QW lasers”,
  A. Dragulinescu, Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on, doi:10.1109/ECAI.2013.6636165
• “Doping concentration variation in the barrier layers of a 462 nm In 0.02 Ga 0.98 N QW laser for structure performance improvement”,
  A. Dragulinescu, Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on, doi:10.1109/ECAI.2013.6636166
• “Investigation of the design parameters of quantum dot enhanced III-V solar cells”,
  K. Driscoll, M. Bennett, S. Polly, D. V. Forbes, and S. M. Hubbard, SPIE OPTO 2013, doi:10.1117/12.2005457
• “Nano-device modeling for charge-sensitive infrared photodetector used in very long wavelength and THz”,
  L. Fan, L. Ding, Q. Weng, and F. Guo, Integrated Ferroelectrics, Vol. 145, No. 1, 2013, doi:10.1080/10584587.2013.788423
• “Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer”,
  Z. Fang, Y. Guang-Rui, S. Jing-Jing, D. Bin-Bin, X. Jian-Yong, S. Chen, et al., Chinese Physics B, Vol. 22, No. 5, 2013, doi:10.1088/1674-1056/22/5/058503
• “Performance enhancement of GaN-based laser diodes with prestrained growth”,
  M. Feng, J. Liu, S. Zhang, D. Jiang, Z. Li, K. Zhou, et al., IEEE Photonics Technology Letters Vol. 25 No. 4, 2013, pp. 2401-2404, doi:10.1109/LPT.2013.2287206
• “High efficient GaN-based laser diodes with tunnel junction”,
  M. Feng, J. Liu, S. Zhang, D. Jiang, Z. Li, K. Zhou, et al., Applied Physics Letters, Vol. 103, No. 4, 2013, doi:10.1063/1.4816598
• “Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer”,
  M.-X. Feng, J.-P. Liu, S.-M. Zhang, D.-S. Jiang, Z.-C. Li, D.-Y. Li, et al., Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 4, 2013, doi:10.1109/JSTQE.2012.2237015
• “Influence of barrier thickness modulation of InGaN/GaN MQW solar cells”,
  C.-C. Hsieh, F.-I. Lai, and H.-W. Wang, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744885
• “Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell”,
  L.-H. Hsu, C.-C. Lin, M.-H. Tan, Y.-L. Yeh, D.-W. Lin, H.-V. Han, et al., Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744965
• “Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode”,
  D. Hu, D. Xiong, and F. Guo, Advanced Materials Research, Vol. 652, No. 2013, doi:10.4028/www.scientific.net/AMR.652-654.612
• “830-nm AlGaAs-InGaAs graded index double barrier separate confinement heterostructures laser diodes with improved temperature and divergence characteristics”,
  C.-T. Hung and T.-C. Lu, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109/JQE.2012.2231053
• “Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier”,
  Y. Ji, Z.-H. Zhang, S. T. Tan, Z. G. Ju, Z. Kyaw, N. Hasanov, et al., Optics letters, Vol. 38, No. 2, 2013, doi:10.1364/OL.38.000202
• “Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer”,
  X. Jian-Yong, X. Yi-Qin, Z. Fang, S. Jing-Jing, D. Bin-Bin, Z. Shu-Wen, et al., Chinese Physics B, Vol. 22, No. 10, 2013, doi:10.1088/1674-1056/22/10/108505
• “Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime”,
  Y. Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, L. Liang, et al., Chinese Physics B, Vol. 22, No. 9, 2013, doi:10.1088/1674-1056/22/9/098801
• “Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers”,
  T. Jin-Hui, Z. Bi-Jun, W. Xing-Fu, C. Xin, R. Zhi-Wei, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 6, 2013, doi:10.1088/1674-1056/22/6/068505
• “Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer”,
  C. Jun, F. Guang-Han, and Z. Yun-Yan, Chinese Physics B, Vol. 22, No. 1, 2013, doi:10.1088/1674-1056/22/1/018504
• “Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes”,
  J. JUREŃCZYK, D. ŻAK, and J. Kaniewski, Optica Applicata, Vol. 43, No. 1, 2013, doi:10.5277/oa130105
• “Modeling and characterizing optical CMOS sensors for biomedical low-intensity light detection”,
  E. Kamrani, M. Hamady, F. Lesage, and M. Sawan, Biomedical Engineering Conference (SBEC), 2013 29th Southern, doi:10.1109/SBEC.2013.50
• “Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes”,
  J. Kang, Z. Li, H. Li, Z. Liu, P. Ma, X. Yi, et al., AIP Advances, Vol. 3, No. 7, 2013, doi:10.1063/1.4816716
• “Modeling of III-Nitride Multiple-Quantum-Well Light-Emitting Structures”,
  M. V. Kisin and H. S. El-Ghoroury, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, No. 5, 2013, doi:10.1109/JSTQE.2013.2242851
• “Numerical investigation on the structural characteristics of GaN/InGaN solar cells”,
  Y.-K. Kuo, J.-Y. Chang, and S.-H. Yen, SPIE OPTO 2013, doi:10.1117/12.2003716
• “Advantages of InGaN solar cells with p-doped and high-Al-content superlattice AlGaN barriers”,
  Y.-K. Kuo, Y.-A. Chang, H.-W. Lin, J.-Y. Chang, S.-H. Yen, F.-M. Chen, et al., Photonics Technology Letters, IEEE, Vol. 25, No. 1, 2013, doi:10.1109/LPT.2012.2228636
• “Self-Consistent Simulation Model and Enhancement of Wavelength Tuning of InGaAsP/InP Multisection DBR Laser Diodes”,
  G. Kyritsis and N. Zakhleniuk, Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 5, 2013, doi:10.1109/JSTQE.2013.2259581
• “Near infrared light emitting from InN/InGaN/GaN dot-in-a-nanorod heterostructure”,
  S.-T. Lee, H.-S. Choi, B.-G. Park, K.-J. Kim, M.-D. Kim, S.-G. Kim, et al., Lasers and Electro-Optics (CLEO), 2013 Conference on, doi:10.1364/CLEO_QELS.2013.JTh2A.102
• “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer”,
  H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, et al., Applied Physics Letters, Vol. 102, No. 1, 2013, doi:10.1063/1.4773558
• “Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well”,
  H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, et al., Applied Physics Express, Vol. 6, No. 5, 2013, doi:10.7567/APEX.6.052102
• “Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode”,
  K. Li, Z. Y. Guo, M. J. Li, and M. J. Zhu, Applied Mechanics and Materials, Vol. 389, No. 2013, doi:10.4028/www.scientific.net/AMM.389.409
• “Advantages of AlGaN-based 310-nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers”,
  Y. Li, S. Chen, W. Tian, Z. Wu, Y. Fang, J. Dai, et al., Photonics Journal, IEEE, Vol. 5, No. 4, 2013, doi:10.1109/JPHOT.2013.2271718
• “Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes”,
  Y. Li, Y. Gao, M. He, J. Zhou, Y. Lei, L. Zhang, et al., Display Technology, Journal of, Vol. 9, No. 4, 2013, doi:10.1109/JDT.2012.2226206
• “Crosstalk suppressing design of GaAs microlenses integrated on HgCdTe infrared focal plane array”,
  Y. Li, Z.-H. Ye, C. Lin, X.-N. Hu, R.-J. Ding, and L. He, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-012-9651-3
• “3D modeling of CMOS image sensor and aperture size effect”,
  Z. Li, Y. Xiao, K. Uehara, M. Lestrade, S. Gao, Y. Fu, et al., Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633156
• “Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers”,
  Z. Q. Li and Z. M. S. Li, Vol. 8639, No. 2013,
• “A look into the origin of shunt leakage current of Cu(In,Ga)Se2 solar cells via experimental and simulation methods”,
  Y.-K. Liao, S.-Y. Kuo, M.-Y. Hsieh, F.-I. Lai, M.-H. Kao, S.-J. Cheng, et al., Solar Energy Materials and Solar Cells, Vol. 117, No. 2013, doi:10.1016/j.solmat.2013.05.031
• “Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice Electron Blocker Layer”,
  B. Lin, K. Chen, H. Han, Y. Lan, C. Chiu, C. Lin, et al., IEEE Photonics Technology Letters, Vol. 25 No. 1, 2013, pp. 2062-2065, doi:10.1109/LPT.2013.2281068
• “Critical Electric Field of InGaN pin Solar Cell”,
  D. Y. Lin and C. Y. Chi, Applied Mechanics and Materials, Vol. 284, No. 2013, doi:10.4028/www.scientific.net/AMM.284-287.1168
• “Effect of quantum barrier thickness in the multiple-quantum-well active region of GaInN/GaN light-emitting diodes”,
  G. Lin, D. Kim, Q. Shan, J. Cho, E. Schubert, H. Shim, et al., IEEE Photonics Journal, Vol. 5, No. 4, 2013, doi:10.1109/JPHOT.2013.2276758
• “Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes”,
  G. Liu, J. Zhang, C. K. Tan, and N. Tansu, Photonics Journal, IEEE, Vol. 5, No. 2, 2013, doi:10.1109/JPHOT.2013.2255028
• “Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier”,
  X. Liu, G. Fan, S. Zheng, C. Gong, T. Lu, Y. Zhang, et al., Science China Technological Sciences, Vol. 56, No. 1, 2013, doi:10.1007/s11431-012-5052-x
• “Electrical injection schemes for nanolasers”,
  A. Lupi, I.-S. Chung, and K. Yvind, SPIE OPTO 2013, doi:10.1109/LPT.2013.2293511
• “MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors”,
  P. Madejczyk, W. Gawron, P. Martyniuk, A. Kębłowski, A. Piotrowski, J. Pawluczyk, et al., Semiconductor Science and Technology, Vol. 28, No. 10, 2013, doi:10.1088/0268-1242/28/10/105017
• “Modeling of HgCdTe LWIR detector for high operation temperature conditions”,
  P. Martyniuk, W. Gawron, P. Madejczyk, A. Rogalski, and J. Piotrowski, Metrology and Measurement Systems, Vol. 20, No. 2, 2013, doi:10.2478/mms-2013-0014
• “Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range”,
  P. Martyniuk, W. Gawron, and A. Rogalski, Journal of Electronic Materials, Vol. 42, No. 11, 2013, doi:10.1007/s11664-013-2737-2
• “Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector”,
  P. Martyniuk and A. Rogalski, Bulletin of the Polish Academy of Sciences: Technical Sciences, Vol. 61, No. 1, 2013, doi:10.2478/bpasts-2013-0020
• “Modelling of MWIR HgCdTe complementary barrier HOT detector”,
  P. Martyniuk and A. Rogalski, Solid-State Electronics, Vol. 80, No. 2013, doi:10.1016/j.sse.2012.10.021
• “Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells”,
  M. Meneghini, S. Vaccari, A. Garbujo, N. Trivellin, D. Zhu, C. J. Humphreys, et al., Japanese Journal of Applied Physics, Vol. 52, No. 8S, 2013, doi:10.7567/JJAP.52.08JG09
• “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop”,
  D. S. Meyaard, G.-B. Lin, J. Cho, E. F. Schubert, H. Shim, S.-H. Han, et al., Applied Physics Letters, Vol. 102, No. 25, 2013, doi:10.1063/1.4811558
• “Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes”,
  H. P. T. Nguyen, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, I. Shih, et al., Nano letters, Vol. 13, No. 11, 2013, doi:10.1021/nl4030165
• “Compound semiconductor solar cells on Si substrate for medium concentrator photovoltaic applications”,
  S. Oh, D.-H. Jun, C. I. Hye, E. Yoon, and W.-K. Park, 9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS: CPV-9, Vol. 1556, No. 1, 2013,
• “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer”,
  J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, et al., Applied Physics Letters, Vol. 103, No. 6, 2013, doi:10.1063/1.4817800
• “Inverse thermal lens effects on the far-field blooming of broad area laser diodes”,
  J. Piprek, Photonics Technology Letters, IEEE, Vol. 25, No. 10, 2013, doi:10.1109/LPT.2013.2255590
• “Self-consistent analysis of thermal far-field blooming of broad-area laser diodes”,
  J. Piprek, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-012-9640-6
• “Self-consistent far-field blooming analysis for high-power Fabry-Perot laser diodes”,
  J. Piprek, SPIE OPTO 2013, doi:10.1007/s11082-012-9640-6
• “What is the problem with GaN-based VCSELs?”,
  J. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633138
• “Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes”,
  H.-Y. Ryu and W. J. Choi, Journal of Applied Physics, Vol. 114, No. 17, 2013, doi:10.1063/1.4828488
• “Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer”,
  H.-Y. Ryu, K.-S. Jeon, M.-G. Kang, Y. Choi, and J.-S. Lee, Optics express, Vol. 21, No. 101, 2013, doi:10.1364/OE.21.00A190
• “Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate”,
  Y. Sheng, C. S. Xia, Z. M. S. Li, and L. W. Cheng, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1109/NUSOD.2012.6316488
• “Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier”,
  Z. Si, T. Wei, J. Ma, J. Yan, X. Wei, H. Lu, et al., ECS Solid State Letters, Vol. 2, No. 10, 2013, doi:10.1149/2.006310ssl
• “Improved hole distribution in InGaN/GaN dual‐wavelength light‐emitting diodes with Mg‐doped quantum‐wells”,
  Z. Si, T. Wei, J. Yan, J. Ma, N. Zhang, Z. Liu, et al., physica status solidi (a), Vol. 210, No. 3, 2013, doi:10.1002/pssa.201228777
• “Numerical study of graded bandgap solar cells”,
  M.-H. Tan, H.-R. Tseng, Y.-H. Lo, S.-C. Hsu, C.-P. Tsai, and C.-C. Lin, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744843
• “Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si”,
  C. Tang, K. Sheng, and G. Xie, Communications, Circuits and Systems (ICCCAS), 2013 International Conference on, Vol. 2, No. 2013, doi:10.1109/ICCCAS.2013.6765355
• “Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer”,
  W. Tian, Z. Feng, B. Liu, H. Xiong, J. Zhang, J. Dai, et al., Optical and Quantum Electronics, Vol. 45, No. 5, 2013, doi:10.1007/s11082-012-9636-2
• “Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n-to p-layers”,
  W. Tian, X. Hui, Y. Li, J. Dai, Y. Fang, Z. Wu, et al., Frontiers of Optoelectronics, Vol. 6, No. 4, 2013, doi:10.1007/s12200-013-0342-x
• “Efficiency improvement using thickness-chirped barriers in blue InGaN multiple quantum wells light emitting diodes”,
  W. Tian, J. Zhang, Z. Wang, F. Wu, Y. Li, S. Chen, et al., doi:10.1109/JPHOT.2013.2285714
• “Observation of two-dimensional p-type dopant diffusion across a p+-InP/n–-InGaAs interface using scanning electron microscopy”,
  D. Tsurumi, K. Hamada, and Y. Kawasaki, Journal of Applied Physics, Vol. 113, No. 14, 2013, doi:10.1063/1.4800134
• “Simulation of grading double hetero-junction non-polar InGaN solar cell”,
  H.-W. Wang, P.-C. Yu, H.-V. Han, C.-C. Lin, H.-C. Kuo, and S.-H. Lin, Nanoelectronics Conference (INEC), 2013 IEEE 5th International, doi:10.1109/INEC.2013.6465979
• “InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer”,
  L. Wang, Y. Zhang, X. Li, Z. Liu, L. Zhang, E. Guo, et al., Proceedings of the Royal Society A: Mathematical, Physical and Engineering Science, Vol. 469, No. 2151, 2013, doi:10.1098/rspa.2012.0652
• “Local Doping Modulation for Improving Quantum Efficiency in GaN-Based Light-Emitting Diodes”,
  N. Wang, T. Mei, X. Yang, H. Li, N. Zhu, and M. Zhang, Japanese Journal of Applied Physics, Vol. 52, No. 11R, 2013, doi:10.7567/JJAP.52.112102
• “Enhanced performance of GaN-based light-emitting diodes by using a p-InAlGaN/GaN superlattice as electron blocking layer”,
  S. Wang, X. Zhang, H. Guo, H. Yang, M. Zhu, L. Cheng, et al., Journal of Modern Optics, Vol. 60, No. 21, 2013, doi:10.1080/09500340.2013.873086
• “Effect of InGaN/GaN Multiple Quantum Wells with pn Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes”,
  S.-W. Wang, D.-W. Lin, C.-Y. Lee, C.-Y. Liu, Y.-P. Lan, H.-c. Kuo, et al., CLEO: QELS_Fundamental Science, 2013, doi:10.1364/CLEO_AT.2013.JW2A.94
• “Advantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer”,
  T.-H. Wang and J.-L. Xu, Optik-International Journal for Light and Electron Optics, Vol. 124, No. 22, 2013, doi:10.1016/j.ijleo.2013.04.065
• “Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer”,
  T.-H. Wang and J.-L. Xu, Materials Science in Semiconductor Processing, Nov. 2013, doi:10.1016/j.mssp.2013.10.026
• “Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters”,
  Y. Wei, W. Yi-Yang, L. Ning-Yang, L. Lei, C. Zhao, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 4, 2013, doi:10.1088/1674-1056/22/4/047801
• “Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure”,
  C. Wen-Yu, H. Yong-Fa, C. Zhao, Y. Wei, D. Wei-Min, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 7, 2013, doi:10.1088/1674-1056/22/7/076803
• “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes”,
  C. S. Xia, Z. S. Li, Z. Li, and Y. Sheng, Applied Physics Letters, Vol. 102, No. 1, 2013, doi:10.1063/1.4774091
• “Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes”,
  C. S. Xia, Z. S. Li, and Y. Sheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633113
• “On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes”,
  C. S. Xia, Z. S. Li, and Y. Sheng, Applied Physics Letters, Vol. 103, No. 23, 2013, doi:10.1063/1.4839417
• “Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model”,
  C. S. Xia, Z. S. Li, Y. Sheng, L. W. Cheng, W. Da Hu, and W. Lu, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-012-9647-z
• “Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers”,
  W. Xing-Fu, T. Jin-Hui, Z. Bi-Jun, C. Xin, R. Zhi-Wei, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 9, 2013, doi:10.1088/1674-1056/22/9/098504
• “Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer”,
  J.-Y. Xiong, Y.-Q. Xu, B.-B. Ding, F. Zhao, J.-J. Song, S.-W. Zheng, et al., Applied Physics A, Vol. 113, No. 2, 2013, doi:10.1007/s00339-013-7923-9
• “Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition”,
  J.-Y. Xiong, F. Zhao, B.-B. Ding, S.-W. Zheng, T. Zhang, and G.-H. Fan, Journal of Applied Physics, Vol. 114, No. 13, 2013, doi:10.1063/1.4824461
• “Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region”,
  J. Xu and T. Wang, Physica E: Low-dimensional Systems and Nanostructures, Vol. 52, No. 2013, doi:10.1016/j.physe.2013.03.004
• “Advantage of tapered and graded AlGaN electron blocking layer in InGaN‐based blue laser diodes”,
  W. Yang, D. Li, J. He, and X. Hu, physica status solidi (c), Vol. 10, No. 3, 2013, doi:10.1002/pssc.201200637
• “Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride pin solar cells”,
  Y.-C. Yao, M.-T. Tsai, C.-Y. Huang, T.-Y. Lin, J.-K. Sheu, and Y.-J. Lee, Applied Physics Letters, Vol. 103, No. 19, 2013, doi:10.1063/1.4829443
• “Design of spectral crosstalk suppressing structure in two-color HgCdTe infrared focal plane arrays detector”,
  Z. Ye, P. Zhang, Y. Li, Y. Chen, S. Zhou, Y. Huang, et al., Optical and Quantum Electronics, Nov. 2013, doi:10.1007/s11082-013-9850-6
• “InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer ”,
  X. Yi, H. Zhu, G. Wang, L. Wang, Y. Zhang, X. Li, et al., March 2013, doi:10.1098/rspa.2012.0652
• “Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks”,
  J. Zhang, Y. Ning, Y. Zeng, J. Zhang, J. Zhang, X. Fu, et al., Laser Physics Letters, Vol. 10, No. 4, 2013, doi:10.1088/1612-2011/10/4/045802
• “High temperature operating (> 80° C) 795-nm VCSEL based on InAlGaAs MQWs active region”,
  J. Zhang, Y. Ning, J. Zhang, X. Zhang, and L. Wang, ISPDI 2013-Fifth International Symposium on Photoelectronic Detection and Imaging, doi:10.1117/12.2032212
• “The advantages of AlGaN-based UV-LEDs inserted with a p-AlGaN layer between the EBL and active region”,
  J. Zhang, W. Tian, F. Wu, W. Yan, H. Xiong, J. Dai, et al., Aug. 2013, doi:10.1109/JPHOT.2013.2278520
• “Asymmetric Heterostructure with Broad Waveguide for 1.06μm Range High-Power Laser Diodes”,
  Y. ZHANG, T. LI, E. HAO, R. CHEN, and Y. WANG, Nanophotonics, Nanoelectronics and Nanosensor 2013, doi:10.1364/N3.2013.NSa3A.32
• “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes”,
  Y. Zhang, H. Zheng, E. Guo, Y. Cheng, J. Ma, L. Wang, et al., Journal of Applied Physics, Vol. 113, No. 1, 2013, doi:10.1063/1.4772669
• “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes”,
  Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, et al., Display Technology, Journal of, Vol. 9, No. 4, 2013, doi:10.1109/JDT.2012.2204858
• “InGaN/GaN light-emitting diode with a polarization tunnel junction”,
  Z.-H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, et al., Applied Physics Letters, Vol. 102, No. 19, 2013, doi:10.1063/1.4806978
• “Improvement of carrier distribution in dual wavelength light-emitting diodes”,
  S. Zhao, W. Tongbo, Z. Ning, M. Jun, W. Junxi, and L. Jinmin, Journal of Semiconductors, Vol. 34, No. 5, 2013, doi:10.1088/1674-4926/34/5/054008
• “Analysis of the subthreshold characteristics of vertical tunneling field effect transistors”,
  H. Zhongfang, R. Guoping, and R. Gang, Journal of Semiconductors, Vol. 34, No. 1, 2013, doi:10.1088/1674-4926/34/1/014002
• “Optimized Design and Performance Research of the High-Voltage LEDs Chipset”,
  M. J. Zhu, H. Y. Huang, Z. Y. Guo, and D. X. Cao, Applied Mechanics and Materials, Vol. 389, No. 2013, doi:10.4028/www.scientific.net/AMM.389.383

2012

• “Parametric optimization on optical properties of long-wavelength GaInNAs quantum well lasers”,
  M. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Photonics (ICP), 2012 IEEE 3rd International Conference on, doi:10.1109/ICP.2012.6379888
• “Design and fabrication of long-wavelength GaInNAs quantum well edge-emitting lasers”,
  M. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Computer Applications and Industrial Electronics (ISCAIE), 2012 IEEE Symposium on, doi:10.1109/ISCAIE.2012.6482065
• “Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells”,
  A. Braun, A. Vossier, E. A. Katz, N. J. Ekins-Daukes, and J. M. Gordon, Energy Environ. Sci., Vol. 5, No. 9, 2012, doi:10.1039/C2EE22167E
• “Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes”,
  J.-Y. Chang and Y.-K. Kuo, Optics letters, Vol. 37, No. 9, 2012, doi:10.1364/OL.37.001574
• “Project-Based Learning with an Online Peer Assessment System in a Photonics Instruction for Enhancing LED Design Skills”,
  S.-H. Chang, T.-C. Wu, Y.-K. Kuo, and L.-C. You, Turkish Online Journal of Educational Technology-TOJET, Vol. 11, No. 4, 2012,
• “Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer”,
  Y.-A. Chang, J.-Y. Chang, Y.-T. Kuo, and Y.-K. Kuo, Applied Physics Letters, Vol. 100, No. 25, 2012, doi:10.1063/1.4729880
• “Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes”,
  B. Chen, W. Jiang, and A. Holmes Jr, Optical and Quantum Electronics, Vol. 44, No. 3-5, 2012, doi:10.1109/NUSOD.2011.6041114
• “Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells”,
  J. Chen, G. Fan, W. Pang, S. Zheng, and Y. Zhang, Chinese Optics Letters, Vol. 10, No. 6, 2012,
• “Improvement of efficiency droop in blue InGaN light-emitting diodes with p-InGaN/GaN superlattice last quantum barrier”,
  J. Chen, G.-H. Fan, W. Pang, S.-W. Zheng, and Y.-Y. Zhang, Photonics Technology Letters, IEEE, Vol. 24, No. 24, 2012, doi:10.1109/LPT.2012.2225421
• “1.47 μm high characteristic temperature InGaAsP/InP MQW laser”,
  W. Chen, L. Li, J. Zhao, Y. Wang, T. Li, P. Lu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316230
• “Study on GaN-based light emitting diode with InGaN/GaN/InGaN multi-layer barrier”,
  L.-W. Cheng, C.-Y. Xu, Y. Sheng, C.-S. Xia, W.-D. Hu, and W. Lu, Optical and Quantum Electronics, Vol. 44, No. 3-5, 2012, doi:10.1007/s11082-011-9534-z
• “Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier”,
  C.-H. Chiu, P.-M. Tu, J.-R. Chang, W.-T. Chang, H.-C. Kuo, and C.-Y. Chang, SPIE OPTO 2012, doi:10.1117/12.912226
• “Modeling the optical and electrical response of nanostructured III–V solar cells”,
  K. Driscoll and S. Hubbard, Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, doi:10.1109/PVSC.2012.6318211
• “Physical model of an optical memory cell with coupling quantum dots”,
  L. Fan and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316505
• “GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure”,
  M. Futami, T. Shindo, T. Koguchi, K. Shinno, T. Amemiya, N. Nishiyama, et al., Photonics Technology Letters, IEEE, Vol. 24, No. 11, 2012, doi:10.1109/LPT.2012.2190053
• “The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm”,
  K. Gai, L. Li, J. Zhao, Y. Wang, T. Li, P. Lu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316236
• “An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage”,
  X. Gang, E. Xu, N. Hashemi, Z. Bo, F. Y. Fu, and W. T. Ng, Chinese Physics B, Vol. 21, No. 8, 2012, doi:10.1088/1674-1056/21/8/086105
• “Electrical, spectral and optical performance of yellow–green and amber micro-pixelated InGaN light-emitting diodes”,
  Z. Gong, N. Liu, Y. Tao, D. Massoubre, E. Xie, X. Hu, et al., Semiconductor Science and Technology, Vol. 27, No. 1, 2012, doi:10.1088/0268-1242/27/1/015003
• “AlInAs selective oxidation for GaInAsP/Si hybrid semiconductor laser using surface activated bonding”,
  Y. Hayashi, R. Osabe, K. Fukuda, N. Nishiyama, and S. Arai, Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on, doi:10.1109/LTB-3D.2012.6238058
• “Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers”,
  T. Jin-Hui, L. Shu-Ti, L. Tai-Ping, L. Chao, W. Hai-Long, W. Le-Juan, et al., Chinese Physics B, Vol. 21, No. 11, 2012, doi:10.1088/1674-1056/21/11/118502
• “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer”,
  Z. Ju, S. T. Tan, Z.-H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, et al., Applied Physics Letters, Vol. 100, No. 12, 2012, doi:10.1063/1.3694054
• “Modeling of InGaAs/InAlAs/InP avalanche photodiodes with undepleted absorber”,
  J. Kaniewski, J. Jurenczyk, D. Zak, and J. Muszalski, 18th Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2012, doi:10.1117/12.2007245
• “Quantum efficiency enhancement in selectively transparent silicon thin film solar cells by distributed Bragg reflectors”,
  M. Kuo, J. Hsing, T. Chiu, C. Li, W. Kuo, T. Lay, et al., Optics express, Vol. 20, No. 106, 2012, doi:10.1364/OE.20.00A828
• “Modeling and optimization of sub-wavelength grating nanostructures on Cu (In, Ga) Se2 solar cell”,
  S.-Y. Kuo, M.-Y. Hsieh, F.-I. Lai, Y.-K. Liao, M.-H. Kao, and H.-C. Kuo, Japanese Journal of Applied Physics, Vol. 51, No. 10S, 2012, doi:10.1143/JJAP.51.10NC14
• “Advantages of near‐ultraviolet light‐emitting diodes with polarization‐matched InGaN/AlGaInN multi‐quantum wells”,
  Y. K. Kuo, Y. H. Chen, J. Y. Chang, and M. C. Tsai, physica status solidi (a), Vol. 209, No. 10, 2012, doi:10.1002/pssa.201228274
• “Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN pin solar cell”,
  Y.-K. Kuo, J.-Y. Chang, and Y.-H. Shih, Quantum Electronics, IEEE Journal of, Vol. 48, No. 3, 2012, doi:10.1109/JQE.2011.2181972
• “Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes”,
  Y.-K. Kuo, Y.-H. Chen, J.-Y. Chang, and M.-C. Tsai, Applied Physics Letters, Vol. 100, No. 4, 2012, doi:10.1063/1.3679180
• “Numerical study of (0001) face GaN/InGaN pin solar cell with compositional grading configuration”,
  Y.-K. Kuo, B.-C. Lin, J.-Y. Chang, F.-M. Chen, and H.-C. Kuo, Photonics Technology Letters, IEEE, Vol. 24, No. 12, 2012, doi:10.1109/LPT.2012.2192723
• “Polarization Effect on the Photovoltaic Characteristics of Superlattice Solar Cells”,
  Y.-K. Kuo, H.-W. Lin, J.-Y. Chang, Y.-H. Chen, and Y.-A. Chang, Electron Device Letters, IEEE, Vol. 33, No. 8, 2012, doi:10.1109/LED.2012.2200229
• “Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers”,
  Y.-K. Kuo, T.-H. Wang, and J.-Y. Chang, Quantum Electronics, IEEE Journal of, Vol. 48, No. 7, 2012, doi:10.1109/JQE.2012.2192717
• “Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers”,
  Y.-K. Kuo, T.-H. Wang, and J.-Y. Chang, Applied Physics Letters, Vol. 100, No. 3, 2012, doi:10.1063/1.3678341
• “Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes”,
  Y.-K. Kuo, T.-H. Wang, J.-Y. Chang, and J.-D. Chen, Photonics Technology Letters, IEEE, Vol. 24, No. 17, 2012, doi:10.1109/LPT.2012.2207381
• “Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers”,
  W. Le-Juan, L. Shu-Ti, L. Chao, W. Hai-Long, L. Tai-Ping, Z. Kang, et al., Chinese Physics B, Vol. 21, No. 6, 2012, doi:10.1088/1674-1056/21/6/068506
• “Numerical simulation of high-efficiency InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate”,
  J. Liang, W. Hu, X. Chen, C. Xia, and L. Cheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316494
• “Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation”,
  D.-W. Lin, C.-H. Wang, S.-P. Chang, P.-H. Ku, Y.-P. Lan, H.-C. Kuo, et al., CLEO: Science and Innovations, 2012, doi:10.1143/APEX.5.042101
• “Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers”,
  C. Liu, T. Lu, Z. Ren, X. Chen, B. Zhao, Y. Yin, et al., Asia Communications and Photonics Conference, 2012
• “Influence of the p-doping distribution in GaN barriers on the performance of blue light-emitting diodes”,
  C. Liu, T. Lu, Z. Ren, X. Chen, B. Zhao, Y. Yin, et al., Communications and Photonics Conference (ACP), 2012 Asia, 2012
• “Enhanced performance of blue light-emitting diodes with InGaN/GaN superlattice as hole gathering layer”,
  C. Liu, T. Lu, L. Wu, H. Wang, Y. Yin, G. Xiao, et al., Photonics Technology Letters, IEEE, Vol. 24, No. 14, 2012, doi:10.1109/LPT.2012.2202104
• “Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers”,
  G. Liu, J. Zhang, C.-K. Tan, and N. Tansu, Photonics Conference (IPC), 2012 IEEE, doi:10.1109/IPCon.2012.6358677
• “Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique”,
  L. Lu, S. Su, C.-C. Ling, S. Xu, D. Zhao, J. Zhu, et al., Applied Physics Express, Vol. 5, No. 9, 2012, doi:10.1143/APEX.5.091001
• “Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer”,
  T. Lu, S. Li, C. Liu, K. Zhang, Y. Xu, J. Tong, et al., Applied Physics Letters, Vol. 100, No. 14, 2012, doi:10.1063/1.3700722
• “Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers”,
  A. Mao, J. Cho, E. F. Schubert, J. K. Son, C. Sone, W. J. Ha, et al., Electronic Materials Letters, Vol. 8, No. 1, 2012, doi:10.1007/s13391-011-0780-9
• “Measurement of internal electric field in GaN-based light-emitting diodes”,
  S.-I. Park, J.-I. Lee, D.-H. Jang, H.-S. Kim, D.-S. Shin, H.-Y. Ryu, et al., Quantum Electronics, IEEE Journal of, Vol. 48, No. 4, 2012, doi:10.1109/JQE.2012.2186610
• “Self-consistent electro-thermal-optical simulation of thermal blooming in broad-area lasers”,
  J. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316546
• “AlGaN polarization doping effects on the efficiency of blue LEDs”,
  J. Piprek, SPIE OPTO 2012, doi:10.1117/12.904744
• “Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping”,
  J. Piprek, Optical and Quantum Electronics, Vol. 44, No. 3-5, 2012, doi:10.1007/s11082-011-9509-0
• “Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes”,
  L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, et al., SPIE OPTO 2012, doi:10.1117/12.908368
• “Effect of internal polarization fields in InGaN/GaN multiple-quantum wells on the efficiency of blue light-emitting diodes”,
  H.-Y. Ryu, Japanese Journal of Applied Physics, Vol. 51, No. 9S2, 2012, doi:10.1143/JJAP.51.09MK03
• “Simulation of the effects of AlGaN electron-blocking layers on the characteristics of InGaN blue light-emitting diodes”,
  H.-Y. Ryu and S.-H. Lee, Journal of the Korean Physical Society, Vol. 61, No. 9, 2012, doi:10.3938/jkps.61.1395
• “Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers”,
  M. M. Satter, H.-J. Kim, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis, et al., Quantum Electronics, IEEE Journal of, Vol. 48, No. 5, 2012, doi:10.1109/JQE.2012.2190496
• “Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer”,
  N. Shaharuddin, S. Idrus, and S. Isaak, Photonics (ICP), 2012 IEEE 3rd International Conference on, doi:10.1109/ICP.2012.6379881
• “Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoelectronic mixer”,
  N. A. Shaharuddin, S. M. Idrus, S. Isahak, and N. Zulkifli, Communications (APCC), 2012 18th Asia-Pacific Conference on, doi:10.1109/APCC.2012.6388266
• “Performance characterization of heterojunction bipolar transistor as an optoelectronic mixer”,
  N. A. Shaharuddin, S. M. Idrus, N. Mohamed, A. Bakar, A. Bakar, and S. Isaak, Jurnal Teknologi (Sciences & Engineering), Special Edition, Vol. 54, No. a, 2012, doi:10.11113/jt.v58.2553
• “Improvement of blue light-emitting diodes with an undoped graded layer as the electrons tunneling barrier layer”,
  W. Tian, W. Yan, H. Xiong, Y. Ding, Y. Li, S. Li, et al., Information Optoelectronics, Nanofabrication and Testing, 2012, doi:10.1364/IONT.2012.ITh4A.20
• “Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure”,
  W. Tian-Hu and X. Jin-Liang, Chinese Physics B, Vol. 21, No. 12, 2012, doi:10.1088/1674-1056/21/12/128504
• “Droop improvement in blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers”,
  J. Tong and S. Li, Asia Communications and Photonics Conference, 2012
• “Adv. Optoelectron. Technol. Inc., Hsinchu, Taiwan”,
  P.-M. Tu, S.-C. Huang, Y.-w. Lin, S.-K. Yang, C.-P. Hsu, J.-R. Chang, et al., Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on, doi:10.1109/SMElec.2012.6417176
• “Simulation and analysis of 980nm intracavity-contacted VCSEL”,
  L. Wan, Y. Feng, P. Xu, G. Jin, Y. Zhao, and Y. Zhao, Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316234
• “Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation”,
  C.-H. Wang, S.-P. Chang, P.-H. Ku, Y.-P. Lan, C.-C. Lin, H.-C. Kuo, et al., Applied Physics Express, Vol. 5, No. 4, 2012, doi:10.1143/APEX.5.042101
• “Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well”,
  T.-H. Wang and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 24, No. 22, 2012, doi:10.1109/LPT.2012.2220131
• “High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer”,
  Y. Wang, T. Li, R. Chen, Y. Zhang, G. Liu, and E. Hao, Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316232
• “Effects of Spontaneous and Piezoelectric Polarization on Spontaneous Emission Rate of Blue LEDs on SiC Substrates”,
  Y. F. Wang, Advanced Materials Research, Vol. 383, No. 2012, doi:10.4028/www.scientific.net/AMR.383-390.6897
• “Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes”,
  C. S. Xia, Z. S. Li, Z. Li, Y. Sheng, Z. H. Zhang, W. Lu, et al., Applied Physics Letters, Vol. 100, No. 26, 2012, doi:10.1063/1.4731625
• “Two-dimensional modeling of CdZnTe/Si based dual and triple junction solar cells”,
  Y. Xiao, Z. Li, M. Lestrade, and Z. S. Li, SPIE OPTO 2012, doi:10.1117/12.906803
• “Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer”,
  W. Xiao-Xia, Y. Xiao-Dong, H. Miao, L. Yang, W. Geng, L. Ping-Yuan, et al., Chinese Physics Letters, Vol. 29, No. 9, 2012, doi:10.1088/0256-307X/29/9/097304
• “Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate”,
  G. Xie, E. Xu, J. Lee, N. Hashemi, W. Ng, B. Zhang, et al., Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, doi:10.1109/ISPSD.2012.6229090
• “Breakdown-voltage-enhancement technique for RF-based AlGaN/GaN HEMTs with a source-connected air-bridge field plate”,
  G. Xie, E. Xu, J. Lee, N. Hashemi, B. Zhang, F. Y. Fu, et al., Electron Device Letters, IEEE, Vol. 33, No. 5, 2012, doi:10.1109/LED.2012.2188492
• “Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells”,
  Y. Xu, G. Fan, D. Zhou, X. Li, T. Lu, F. Zhao, et al., Chinese Science Bulletin, Vol. 57, No. 20, 2012, doi:10.1007/s11434-012-5211-2
• “Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer”,
  Q.-R. Yan, Y. Zhang, S.-T. Li, Q.-A. Yan, P.-P. Shi, Q.-L. Niu, et al., Optics letters, Vol. 37, No. 9, 2012, doi:10.1364/OL.37.001556
• “Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin”,
  H. Yang, Y. Qu, T. Li, Z. Zhao, S. Yu, L. Liu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316337
• “Crosstalk suppressing design of GaAs microlenses integrated on HgCdTe infrared focal plane arrays”,
  Z. Ye, Y. Li, C. Lin, X. Hu, R. Ding, and L. He, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1007/s11082-012-9651-3
• “Design and Fabrication of Integrated Electroabsorption Modulated Laser”,
  Y.-C. Yu, Ph.D. Thesis, 2012, National Taiwan University of Science and Technology
• “CIGS solar cell on flexible stainless steel substrate fabricated by sputtering method: Simulation and experimental results”,
  R. Zhang, D. R. Hollars, and J. Kanicki, Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on,
• “Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers”,
  Y.-Y. Zhang, G.-H. Fan, Y.-A. Yin, and G.-R. Yao, Optics express, Vol. 20, No. 101, 2012, doi:10.1364/OE.20.00A133
• “Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction”,
  Y.-Y. Zhang, G.-H. Fan, and T. Zhang, Quantum Electronics, IEEE Journal of, Vol. 48, No. 2, 2012, doi:10.1109/JQE.2011.2167600
• “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer”,
  Y.-Y. Zhang, X.-L. Zhu, Y.-A. Yin, and J. Ma, Electron Device Letters, IEEE, Vol. 33, No. 7, 2012, doi:10.1109/LED.2012.2197593
• “Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well”,
  C. Zhao, Y. Wei, L. Lei, W. Cheng-Hao, L. Lei, H. Yong-Fa, et al., Chinese Physics B, Vol. 21, No. 10, 2012, doi:10.1088/1674-1056/21/10/108505
• “The design of short wavelength light emitting diodes”,
  Z. Zhao, Q. Y. L. Te, Y. Hao, Y. Shuai, L. Lei, T. Chao-qun, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316235