We are proud to announce the release of Version Aug14 of device simulator packages (APSYS, LASTIP, PICS3D and OPTOWIZARD).

The main feature in this version is a complete upgrade of Crosslight’s famous compound semiconductor material data library system. The new material data system, named simplified complex library (SCXLIB), unifies passive and active semiconductor material macros of different types (quantum wells of different types, quantum wire, quantum dot and active-bulk region) and offers clear and easy-to-understand material names.

For new users of Crosslight, the SCXLIB material system is clearer and easier to set up. For expert users, the new data system offers better consistency and robustness in applications dealing with complicated quantum well/wire/dot structures.

While encouraging the conversion of all existing projects into the new SCXLIB system with a semi-automatic converter, Version Aug14 maintains full backward compatibility. We intend to support older material system for several years before a complete switch over.

Other significant features include the upgrade of non-local quantum transport model for multiple quantum well (MQW). The Aug14 version introduces
a model to account for leakage due to hot carriers generated by CCCH Auger recombination, an effect which was recently claimed to be observed experimentally.
The new hot-Auger model works together with other existing models such as electron overflow leakage and hole injection blocking in GaN-LED. We are proud to offer APSYS Aug14
that would satisfy all schools of thoughts in the continued controversy over the origin of LED droop.

The mixed-mode model has been upgraded to handle multiple TCAD devices in a circuit environment. Users can set up process and device simulations for individual devices with isolated mesh (2D or 3D); our Minispice model (Crosslight’s implementation of SPICE) can then be used to join the individual devices in a circuit simulation.

For sensor applications, k.p perturbations due to non-common-atom interfaces (such as those in type II InAs/GaSb superlattices) have been implemented as a first step to improving our model.
Full implementation of the model (including periodic QW boundary conditions and gain calculations) will also be made available in our beta version soon; please contact Crosslight for early access.

Other improvements involve enhancement of mobility model collection, enhanced FDTD capability in the OPTOWIZARD package, and improvement in the advanced NEGF transport model. Interested readers
may contact Crosslight for more details.

A research article co-authored by Crosslight’s Simon Li has been selected has an Applied Physics Letters Editor’s pick in Device Physics. As a result of this selection, the article may be downloaded for free for a limited time from the APL website.

Are Electron-Blocking Layers Always Beneficial?

An APL article co-authored by Crosslight’s Simon Li and Changsheng Xia is featured in Compound Semiconductor magazine. The full text can be found here.

A new book, “Integrated Power Devices and TCAD simulation” is published by CRC press

A new book co-authored by Crosslight’s Fred Yue Fu, Simon Li, Prof. W.T. Ng from University of Toronto and Prof. Johnny Sin from Hong Kong University of Science and Technology has been published by CRC press. This book covers a wide range of topics including power electronics, power ICs, power devices, TCAD process simulation, TCAD device simulation as well as some basic introduction to GaN HEMT power devices. More information can be found on the publisher’s web page.