APSYS, Advanced Physical Models of Semiconductor Devices, is based on 2D/3D finite element analysis of electrical, optical and thermal properties of compound semiconductor devices, with silicon as a special case. Emphasis has been placed on band structure engineering and quantum mechanical effects. Inclusion of various optical modules also makes this simulation package attractive for applications involving photosensitive or light emitting devices.

 Applications

  • Diodes, transistors and various other types of silicon devices
  • LEDs and OLEDs
  • Solar cells
  • Photodetectors (PD)
  • High electron mobility transistors (HEMT)
  • Heterojunction bipolar transistors (HBT)
  • Resonant tunneling diodes (RTD)
  • Quantum well infrared photodetectors (QWIP)
  • Small MOS devices with strong quantum mechanical effects (Quantum-MOS)
  • Power devices

Features

  • Restart from previous saved status
  • Industry leading numerical convergence
  • Extensive material macro library
  • Hydrodynamic models for hot carriers
  • Quantum tunneling & transport
  • Thermionic emission model
  • Heat transfer equations
  • Deep level traps and trap dynamics
  • Interface states
  • Poole-Frenkel model
  • Self-consistent QW calculations
  • Temperature-dependent model
  • Impact ionization
TOP