August 2016 version finalized

by / Wednesday, 31 August 2016 / Published in 2016 News, News & Events

Crosslight is proud to announce that its 2016.8 version has been finalized and will soon be released to customers.

Summary of changes:

  • A new graphical user interface program called SimuCenterJS has been released. Based on Javascript, this greatly improved launching pad for simulations replaces the existing SimuPics3d, SimuApsys and SimuCSuprem programs and enhances Crosslight’s capabilities to support other OS platforms. It also includes a much better Design Of Experiment platform which allows parameter optimization across multiple simulators, adding new DOE nodes and collecting/plotting in a DOE tree.
  • The functionality of LASTIP for Fabry-Perot lasers has been merged into a new basic edition of PICS3D.
  • Minispice capability enhanced so that a MxN resistor network can be inserted into the semiconductor simulation using an array of electrodes.
  • Improvement of band alignment models.
  • Improvement of 8×8 k.p model, especially for typeII IR PD application.
  • Microcavity model suitable for microcavity laser diode; already demonstrated for VCSEL with surface-relief effects.
  • New feature to automate the set up of the intraband quantum tunneling model. The location of tunneling regions and tunneling directions can now be totally automated.
  • Implementation of a localized tunneling model (sometime referred to as unified Schottky tunneling model) using p-n carrier generation to mimic intraband tunneling.
  • NEGF based quantum mechanical transport has been enhanced to transport of holes (useful for PMOS).
  • Multicavity VCSEL model improved to better handle surface relief effects.
  • LED device model (RCLED, LED_control and LED_simple, racetracing) with improved photorecycling and photon absorption.
  • Thomson heat more accurately defined in self-heating thermal model.
  • AC analysis upgraded for better modeling of traps and metal/semiconductor interfaces.
  • Quantum-well trap assisted tunneling model implemented which likely to explain the thermal efficiency droop (temperature dependent) for LED.
  • LO phone scattering times computed for quantum cascade lasers and QWIP; these were previously empirical fitting parameters.
  • Added ability to model an individual quantum dot with direct electrical/optical pumping. Previously quantum dot states were imported into a larger-scale (wetting layer) APSYS/PICS3D model where the electrical injection was done.
  • Improved interface with CSUPREM so that any impurity implanted or deposited in CSUPREM can be treated as traps in APSYS/PICS3D.
  • Coupled mode model interfaced with BPM propagation to that BPM mode shape is expressed as sum of lateral modes. This is useful for tapered laser diodes such as hybrid silicon lasers.
TOP